男,研究员,博士生导师,2007年7月于吉林大学物理学院获得理学学士学位。2012年7月于中国科学院物理研究所磁学国家重点实验室获凝聚态物理理学博士学位。2012年至2017年在加州大学洛杉矶分校(UCLA)从事博士后工作。2017年10月加入中国科学院物理研究所。现任磁学国家重点实验室副主任、M02课题组长。获得中组部青年人才项目和中科院人才项目支持。获得2022年度中国电子学会先进工作者。获得中国科学院物理研究所2021年春季"科技新人奖"。担任中国电子学会应用磁学分会委员、副秘书长。担任低温物理专业委员会委员。担任中国材料研究学会纳米材料与器件分会理事会理事、副秘书长。被聘任为《金属学报》首届青年编委委员,四刊(Chinese Physics Letters, Chinese Physics B,《物理学报》和《物理》)联合青年编委。
从事自旋电子学(同时利用电子的自旋和电荷属性)材料和器件相关的研究。致力于探索磁性薄膜异质结材料与器件中自旋轨道耦合相关的物理效应及其在磁存储、磁逻辑方面的应用。目标是开发出具有高性能和高能源效率的新型自旋电子学器件。
近几年来重点研究磁性薄膜异质结材料和器件中的自旋轨道力矩和室温拓扑磁性斯格明子,获得了多项重要科研成果。至今已经在Nat. Nanotech.、Nat. Mater.、Nat. Phys.、Nat. Electron.、Nat. Commun.、Science、Sci. Adv.、Phys. Rev. Lett.、Adv. Mater.、Nano Lett.等国际重要期刊上发表学术论文200余篇,引用超过1.2万余次。
部分通讯及一作文章:
(32) Chenbo Zhao, Laichuan Shen, Baoshan Cui, Bin He, Chuangwen Wu, Jiahui Li, Yao Guang, Zhuyang Nie, Xiao Zheng, Gen Yin, Ka Shen, Hao Wang, Shiheng Liang, Yan Zhou*, Xiufeng Han, Guoqiang Yu* “Designing and Constructing a Skyrmion Diode Device via Antiferromagnetic Exchange Bias Engineering” Advanced Functional Materials 34, 2405296 (2024) [基于激光修饰局域反铁磁交换偏置,实现了磁斯格明子二极管原理型器件。]
(31) Hongjun Xu, Yizhou Liu, Giovanni Finocchio, Kang L. Wang, Guoqiang Yu* “Progress and perspective on the topological spin textures in two dimensional van der Waals magnets” Science Bulletin 69, 1612 (2024) [邀请展望文章。]
(30) Yuqiang Wang, Yu Zhang, Chaozhong Li, Jinwu Wei, Bin He, Hongjun Xu, Jihao Xia, Xuming Luo, Jiahui Li, Jing Dong, Wenqing He, Zhengren Yan, Wenlong Yang, Fusheng Ma*, Guozhi Chai, Peng Yan, Caihua Wan, Xiufeng Han & Guoqiang Yu* “Ultrastrong to nearly deep-strong magnon-magnon coupling with a high degree of freedom in synthetic antiferromagnets” Nature Communications 15, 2077 (2024) [在人工反铁磁中实现了超强magnon-magnon耦合。]
(29) Bin He, Haonan Jin, Dongfeng Zheng, Yizhou Liu, Jialiang Li, Yue Hu, Yuqiang Wang, Junwei Zhang, Yong Peng, Caihua Wan, Tao Zhu, Xiufeng Han, Shilei Zhang*, and Guoqiang Yu* “Creation of Room-Temperature Sub-100 nm Antiferromagnetic Skyrmions in an Antiferromagnet IrMn through Interfacial Exchange Coupling” Nano Letters 24, 2196 (2024) [利用界面铁磁-反铁磁交换相互作用,成功产生了100nm尺寸的反铁磁斯格明子。]
(28) Yu Zhang#, Hongjun Xu#, Ke Jia#, Guibin Lan, Zhiheng Huang, Bin He, Congli He*, Qiming Shao, Yizhan Wang, Mingkun Zhao, Tianyi Ma, Jing Dong, Chenyang Guo, Chen Cheng, Jiafeng Feng, Caihua Wan, Hongxiang Wei, Youguo Shi, Guangyu Zhang, Xiufeng Han, Guoqiang Yu* “Room temperature field-free switching of perpendicular magnetization through spin-orbit torque originating from low-symmetry type II Weyl semimetal” Science Advances 9, eadg9819 (2023) [利用具有结构对称破缺的单晶TaIrTe4产生自旋极化电流,在不需要外磁场的条件下实现了室温垂直磁矩的电流驱动翻转。]
(27) Bin He#, Riccardo Tomasello#, Xuming Luo, Ran Zhang, Zhuyang Nie, Mario Carpentieri, Xiufeng Han, Giovanni Finocchio*, and Guoqiang Yu* “All-Electrical 9‑Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation” Nano Letters 23, 9482 (2023) [借助激光对局域磁各向异性的修饰技术,成功制备出室温条件下工作的全电控9比特斯格明子存储器件。]
(26) Hongjun Xu, Ke Jia, Yuan Huang, Fanqi Meng, Qinghua Zhang, Yu Zhang, Chen Cheng, Guibin Lan, Jing Dong, Jinwu Wei, Jiafeng Feng, Congli He, Zhe Yuan, Mingliang Zhu, Wenqing He, Caihua Wan, Hongxiang Wei, Shouguo Wang, Qiming Shao, Lin Gu, Michael Coey, Youguo Shi, Guangyu Zhang, Xiufeng Han & Guoqiang Yu* “Electrical detection of spin pumping in van der Waals ferromagnetic Cr2Ge2Te6 with low magnetic damping” Nature Communications 14, 382414 (2023) [利用Cr2Ge2Te6的自旋泵浦实现了向重金属Pt和W的自旋注入,并且通过逆自旋霍尔效应实现了电学探测。实验发现CGT块体的吉尔伯特阻尼因子在4-10 × 10−4 量级,是当前范德华磁性材料中已报道的最低值。]
(25) Guibin Lan#, Hongjun Xu#, Yu Zhang, Chen Cheng, Bin He, Jiahui Li, Congli He*, Caihua Wan, Jiafeng Feng, Hongxiang Wei, Jia Zhang, Xiufeng Han and Guoqiang Yu* “Giant tunnelling magnetoresistance in spin-filter magnetic tunnel junctions based on van der Waals A-type antiferromagnet CrSBr” Chinese Physics Letters Express Letter 40, 058501 (2023)
(24) B. He, Y. Hu, C. B. Zhao, J. W. Wei, J. W. Zhang, Y. Zhang, C. Cheng, J. H. Li, Z. Y. Nie, Y. X. Luo, Y. Zhou, S. L. Zhang, Z. M. Zeng, Y. Peng, J. M. D. Coey, X. F. Han, and G. Q. Yu* “Realization of Zero-Field Skyrmions in a Magnetic Tunnel Junction” Advanced Electronic Materials 9, 2201240 (2023) [利用反铁磁交换偏置效应,在磁性隧道结中实现了不需要外磁场稳定的斯格明子。]
(23) Yao Guang, Like Zhang, Junwei Zhang, Yadong Wang, Yuelei Zhao, Riccardo Tomasello, Senfu Zhang, Bin He, Jiahui Li, Yizhou Liu, Jiafeng Feng, Hongxiang Wei, Mario Carpentieri, Zhipeng Hou, Junming Liu, Yong Peng, Zhongming Zeng, Giovanni Finocchio*, Xixiang Zhang, John Michael David Coey, Xiufeng Han, Guoqiang Yu* “Electrical Detection of Magnetic Skyrmions in a Magnetic Tunnel Junction” Advanced Electronic Materials 9, 2200570 (2023) [通过将磁斯格明子材料和磁性隧道结材料复合,成功地将斯格明子耦合进入磁性隧道结的自由层,并成功地利用隧穿磁电阻实现了斯格明子读取,解决了斯格明子材料与磁性隧道结材料不兼容的难题。]
(22) Jinwu Wei, Xiao Wang, Baoshan Cui, Chenyang Guo, Hongjun Xu, Yao Guang, Yuqiang Wang, Xuming Luo, Caihua Wan, Jiafeng Feng, Hongxiang Wei, Gen Yin, Xiufeng Han*, Guoqiang Yu* “Field-Free Spin–Orbit Torque Switching in Perpendicularly Magnetized Synthetic Antiferromagnets” Advanced Functional Materials 32, 2109455 (2022)[利用层间耦合作用,实现了零外磁场条件下自旋轨道矩驱动垂直人工反铁磁磁矩翻转。]
(21) Yao Guang#, Kejing Ran#, Junwei Zhang, Yizhou Liu, Senfu Zhang, Xuepeng Qiu, Yong Peng, Xixiang Zhang, Markus Weigand, Joachim Gräfe, Gisela Schütz, Gerrit van der Laan, Thorsten Hesjedal, Shilei Zhang*, Guoqiang Yu*, and Xiufeng Han “Superposition of Emergent Monopole and Antimonopole in CoTb Thin Films” Physical Review Letters 127, 217201 (2021) [发现CoTb合金薄膜中存在三维拓扑磁结构,实验上直接证明了演生磁单极子和反单极子的叠加态磁结构。]
(20) B. Cui, D. Yu, Z. Shao, Y. Liu, H. Wu, P. Nan, Z. Zhu, C. Wu, T. Guo, P. Chen, H. Zhou, L. Xi, W. Jiang, H. Wang, S. Liang, H. Du, K. L. Wang, W. Wang, K. Wu, X. Han, G. Zhang, H. Yang*, G. Q. Yu* “Néel-Type Elliptical Skyrmions in a Laterally Asymmetric Magnetic Multilayer” Advanced Materials 33, 2006924 (2021) [通过构建楔形薄膜,成功诱导出面内磁各向异性和DMI各向异性,进而实现室温椭圆形斯格明子。]
(19) Kejing Ran#, Yizhou Liu#, Yao Guang, David M Burn, Gerrit van der Laan, Thorsten Hesjedal*, Haifeng Du*, Guoqiang Yu*, Shilei Zhang* “Creation of a Chiral Bobber Lattice in Helimagnet-Multilayer Heterostructures” Physical Review Letters 126, 017204 (2021);(Editors' Suggestion); [通过构建多层膜/块体材料异质结构,成功利用多层膜中的斯格明子在块体材料中诱导实现磁浮子。]
(18) Jinwu Wei, Hai Zhong, Jiuzhao Liu, Xiao Wang, Fanqi Meng, Hongjun Xu, Yizhou Liu, Xin Luo, Qinghua Zhang, Yao Guang, Jiafeng Feng, Jia Zhang, Lihong Yang, Chen Ge*, Lin Gu, Kuijuan Jin, Guoqiang Yu*, Xiufeng Han “Enhancement of Spin-Orbit Torque by Strain Engineering in SrRuO3 Films” Advanced Functional Materials 31, 2100380 (2021) [发现室温下SrRuO3诱导产生的自旋轨道矩与结构和应变相关,通过调控结构和应力将自旋轨道矩效率提高20倍。]
(17) Z. R. Yan, Y. Z. Liu, Y. Guang, K. Yue, J. F. Feng, R. K. Lake, G. Q. Yu*, and X. F. Han* “Skyrmion-Based Programmable Logic Device with Complete Boolean Logic Functions” Physical Review Applied 15, 064004 (2021)(Editors' Suggestion); 引用次数:> 50次 [提出了通过操控局域交换偏置形成人工钉扎中心,构建出新型逻辑器件,实现了16种完整的布尔逻辑功能。]
(16) Y. Guang#, I. Bykova#, Y. Liu#, G. Q. Yu*, E. Goering, M. Weigand, J. Gräfe, S. K. Kim, J. Zhang, H. Zhang, Z. Yan, W. Li, C. Wan, J. Feng, X. Wang, C. Guo, H. Wei, Y. Peng, Y. Tserkovnyak, X. Han, G. Schütz “Creating a 100-nm-scale zero-field skyrmion in exchange-biased multilayers through X-ray illumination” Nature Communications 11, 949 (2020); 引用次数:> 50次 [首次实验证明了,可以通过X射线技术来影响反铁磁异质结中交换偏置来产生单个斯格明子其及人工晶体。]
(15) Y. Guang#, Y. Peng#, Z. Yan#, Y. Liu, J. Zhang, X. Zeng, S. Zhang, S. Zhang, D. M. Burn, N. Jaouen, J. Wei, H. Xu, J. Feng, C. Fang, G. v. d. Laan, T. Hesjedal, B. Cui, X. Zhang*, G. Q. Yu*, X. Han “Electron Beam Lithography of Magnetic Skyrmions” Advanced Materials 32, 2003003 (2020) [首次实验证明了,可以通过电子束来影响反铁磁异质结中交换偏置来产生单个斯格明子其及人工晶体。]
(14) X. Sun#, W. Li#, X. Wang#, Q. Sui#, T. Zhang, Z. Wang, L. Liu, D. Li, S. Feng, S. Zhong, H. Wang, V. Bouchiat, M. N. Regueiro, Ni. Rougemaille, J. Coraux, A. Purbawati, A. Hadj-Azzem, Z. Wang, B. Dong, X. Wu, T. Yang*, G. Q. Yu*, B. Wang*, Z. Han*, X. F. Han, Z. D. Zhang “Room temperature ferromagnetism in ultra-thin van der Waals crystals of 1T-CrTe 2” Nano Research 13, 3358-3363 (2020); 引用次数:> 200次 [实现了室温二维铁磁。]
(13) H. Xu, J. Wei, H. Zhou, J. Feng, T. Xu, H. Du, C. He, Y. Huang, J. Zhang, Y. Liu, H. Wu, C. Guo, X. Wang, Y. Guang, H. Wei, Y. Peng, W. Jiang, G. Q. Yu*, X. Han “High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe2” Advanced Materials 32, 2000513 (2020); 引用次数:> 150次 [成功制备了大面积、高质量、厚度可控的第二类狄拉克半金属PtTe2薄膜,证实了其具有非常大的自旋轨道力矩效应,自旋霍尔电导为范德瓦尔斯材料的纪录值。
(12) X. Wang#, J. Tang#, X. Xia#, C. He, J. Zhang, Y. Liu, C. Wan, C. Fang, C. Guo, W. Yang, Y. Guang, X. Zhang, H. Xu, J. Wei, M. Liao, X. Lu, J. Feng, X. Li, Y. Peng, H. Wei, R.Yang, D. Shi, X. Zhang, Z. Han*, Z. Zhang, G. Zhang*, G. Q. Yu* and X. Han “Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2” Science Advances 5, eaaw8904 (2019); 引用次数:> 300次 [实验证明了,可以利用自旋霍尔效应产生的自旋极化电流操控二维磁性材料Fe3GeTe2的磁矩。]
(11) W. Li#, I. Bykova#, S. Zhang#, G. Q. Yu*, R. Tomasello, M. Carpentieri, Y. Liu, Y. Guang, J. Gräfe, M. Weigand, D. M. Burn, G. van der Laan, T. Hesjedal, Z. Yan, J. Feng, C. Wan, J. Wei, X. Wang, X. Zhang, H. Xu, C. Guo, H. Wei, G. Finocchio*, X. Han, G. Schütz “Anatomy of Skyrmionic Textures in Magnetic Multilayers” Advanced Materials 31, 1807683 (2019); 引用次数:> 100次 [通过构建多层膜结构,实现了尺寸小于100 nm的室温斯格明子,并首次直接地证明了其具有三维的磁性结构。]
(10) Y. Liu, G. Q. Yu* “MRAM gets closer to the core” Nature Electronics 2,555 (2019) [受邀为英特尔研发团队的最新研究进展撰写评论文章。]
(9) Q. Shao#, C. Tang#, G. Q. Yu*, A. Navabi, H. Wu, C. He, J. Li, P. Upadhyaya, P. Zhang, S. A. Razavi, Q. L. He, Y. Liu, P. Yang, S. K. Kim, C. Zheng, Y. Liu, L. Pan, R. K Lake, X. Han, Y. Tserkovnyak, J. Shi, K. L. Wang* “Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films” Nature Communications 9, 3612 (2018);引用次数:> 100次 [实验证明,电流在无法通过磁性绝缘体的情况下仍然可以通过自旋轨道力矩驱动其磁矩翻转,并证明了自旋轨道力矩与铁磁层磁化强度的相关性。]
(8) G. Q. Yu#*, A. Jenkins#, X. Ma#, S. A. Razavi, C. He, G. Yin, Q.Shao, Q. He, H. Wu, W. Li, W. Jiang, X. Han, X. Li, A. C. B.Jayich, P. K. Amiri, K. L Wang* "Room-temperature skyrmions in an antiferromagnet-based heterostructure" Nano Letters 18, 980 (2018);引用次数:> 100次 [利用交换偏置有效磁场,在反铁磁(IrMn)/铁磁异质结中实现了室温不需要外加磁场的斯格明子稳定相。]
(7) G. Q. Yu* “Two-terminal MRAM with a spin” Nature Electronics 1, 496 (2018) [受邀为斯坦福研究团队的最新研究进展撰写评论文章。]
(6) X. Ma#*, G. Q. Yu#, S. A. Razavi, S. S. Sasaki, X. Li, K. Hao, S. H. Tolbert, K. L. Wang, and X. Li* "Dzyaloshinskii-Moriya interaction across an antiferromagnet-ferromagnet interface" Physical Review Letters 119, 027202 (2017) 引用次数:> 50次 [实验揭示了反铁磁(IrMn)/铁磁异质结中同样存在相当大的DM相互作用,并揭示了DM相互作用与其反铁磁序的相关性。]
(5) G. Q. Yu*, P. Upadhyaya, Q. Shao, H. Wu, G. Yin, X. Li, C. He, W. Jiang, X. Han, P. K. Amiri*, and K. L. Wang* "Room-temperature skyrmion shift device for memory application" Nano Letters 17 (1), pp 261–268 (2017);引用次数:> 300次 [通过控制电流脉冲的幅值和持续时间,实现了原型器件中单个斯格明子的精准写入和移动。基于此,首次实现了以斯格明子为信息载体的原型移位寄存器件。]
(4) G. Q. Yu#, P. Upadhyaya#, X. Li, W. Li, S. K. Kim, Y. Fan, K. L Wong, Y. Tserkovnyak, P. K. Amiri*, K. L Wang* “Room-temperature creation and spin-orbit torque manipulation of skyrmions in thin films with engineered asymmetry” Nano Letters 16, 1981 (2016);引用次数:> 300次 [首次证明了通过调制薄膜材料中的磁各向异性能够在室温、低磁场的条件下产生稳定的斯格明子相。]
(3) Q. Shao#*, G. Q. Yu#*, Y. Lan#, Y. Shi, M. Li, C. Zheng, X. Zhu, L. Li, P. Amiri, K. L. Wang* "Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenides/Ferromagnet Bilayers" Nano Letters 16 (12), pp 7514–7520 (2016);引用次数:> 300次 [在可大规模生产的单层过渡金属硫化物/磁性薄膜复合结构中,发现了一个由Rashba效应导致产生的自旋轨道力矩,揭示了二维过渡金属硫化物作为自旋轨道力矩材料的潜力。]
(2) G. Q. Yu#*, P. Upadhyaya#, Y. B. Fan, J. G. Alzate, W. J. Jiang, K. L Wong, S. Takei, S. A. Bender, L. T. Chang, Y. Jiang, M. R. Lang, J. S. Tang, Y. Wang, Y. Tserkovnyak, P. Khalili Amiri, K. L Wang* “Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields” Nature Nanotechnology 9, 548 (2014); Highlighted in Nature Nanotech. - News and Views;引用次数:> 1000次 [国际上首次证明了,在具有面内对称性破缺的楔形结构中,电流产生的自旋轨道力矩可以在零磁场条件下驱动垂直磁矩翻转]
(1) G. Q. Yu*, P. Upadhyaya, K. L. Wong, W. Jiang, J. G. Alzate, J. Tang, P. K. Amiri*, K. L. Wang* “Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation” Physical Review B 89, 104421 (2014);引用次数:> 150次 [揭示了自旋轨道矩驱动垂直磁矩翻转是通过驱动手性磁畴壁的运动实现的。]
(1)基于磁性二维材料的自旋物理研究和新型自旋电子器件的开发;(2)研究室温拓扑磁性斯格明子的物理及其器件应用;(3)研究磁性异质结中的自旋轨道力矩及其在存储、逻辑器件中的应用。
电话:
010-82649215
Email:
guoqiangyu@iphy.ac.cn